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Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb

Identifieur interne : 015952 ( Main/Repository ); précédent : 015951; suivant : 015953

Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb

Auteurs : RBID : Pascal:98-0495495

Descripteurs français

Pascal (Inist)
- 7120N, 7830F, 7866F, Etude expérimentale, Bande interdite, Couche épitaxique semiconductrice, Aluminium composé, Indium composé, Semiconducteur III-V, Paramètre cristallin, Spectre transformée Fourier, Spectre IR.

English descriptors

KwdEn :
- Aluminium compounds, Energy gap, Experimental study, Fourier transform spectra, III-V semiconductors, Indium compounds, Infrared spectra, Lattice parameters, Semiconductor epitaxial layers.

Abstract

We use transmission spectroscopy to determine the energy gap for the Al_xIn_1-xSb alloy system in the Al concentration range from 0% to 25% from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al concentration range, we find a linear change of energy gap with alloy lattice constant. © 1998 American Institute of Physics.

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<author><name sortKey="Goldammer, K J" uniqKey="Goldammer K">K. J. Goldammer</name>
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<front><div type="abstract" xml:lang="en">We use transmission spectroscopy to determine the energy gap for the Al<sub>x</sub>
In<sub>1-x</sub>
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Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb

Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb

Descripteurs français

English descriptors

Abstract

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